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2N3444 - GENERAL PURPOSE TRANSISTOR

This page provides the datasheet information for the 2N3444, a member of the 2N3252 GENERAL PURPOSE TRANSISTOR family.

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3252 2N3253 2IM3444 vCEO 30 40 50 v CBO 60 75 80 VEBO 5.0 Pd 1.0 5.71 Unit Vdc Vdc Vdc Watts mW/°C Pd Watts 5.0 mW/°C 28.6 Tj. Tstg - 65 to + 200 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Rftjc R 0JA Max 35 0.175 Unit °C/W °C/mW 2N3252 2N3253 2N3444 GENERAL PURPOSE NPN SILICON JAN, JTX AVAILABLE 2N3253, 2N3444 CASE 79, STYLE 1 TO-39 (TO-205AD) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
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