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Motorola Electronic Components Datasheet

2N4264 Datasheet

GENERAL PURPOSE TRANSISTOR

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
General Purpose Transistor
NPN Silicon
2N4264
COLLECTOR
3
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
15
30
6.0
200
350
2.8
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance, Junction to Ambient
RqJA
357
Thermal Resistance, Junction to Case
RqJC
125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100°C)
Collector Cutoff Current
(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Unit
°C/W
°C/W
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEV
ICEX
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min Max Unit
Vdc
15 —
Vdc
30 —
Vdc
6.0 —
µAdc
— 0.1
— 10
nAdc
— 100
REV 2
2–22
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

2N4264 Datasheet

GENERAL PURPOSE TRANSISTOR

No Preview Available !

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc, TA = – 55°C)
(IC = 30 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)(1)
(IC = 200 mAdc, VCE = 1.0 Vdc)(1)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)(1)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)(1)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz, IE = 0)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 10 Vdc, VEB(off) = 2.0 Vdc,
IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C)
Storage Time
Fall Time
Turn–On Time
VCC = 10 Vdc, (IC = 10 mAdc, for ts)
(IC = 100 mA for tf)
(IB1 = –10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C)
(VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc,
IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A)
Turn–Off Time
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A)
Storage Time
(VCC = 10 Vdc, IC = 10 mA,
IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B)
Total Control Charge
(VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc)
(Fig. 3, Test Condition A)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
fT
Cibo
Cobo
td
tr
ts
tf
ton
toff
ts
QT
Min
25
40
20
40
30
20
0.65
0.75
300
2N4264
Max Unit
160
Vdc
0.22
0.35
Vdc
0.8
0.95
— MHz
8.0 pF
4.0 pF
8.0 ns
15 ns
20 ns
15 ns
25 ns
35 ns
20 ns
80 pC
Figure 1. Switching Time Equivalent Test Circuit
Test
Condition IC VCC RS RC CS(max) VBE(off) V1 V2 V3
mA V Ω Ω pF
V VVV
A 10 3 3300 270 4
–1.5 10.55 –4.15 10.70
B 10 10 560 960 4
— — –4.65 6.55
C 100 10 560 96 12
–2.0 6.35 –4.65 6.55
V1
0
VEB(off)
ton
t1 V3
0
V2
< 2 ns
toff
t1
VCC
RC
RB
< 2 ns
PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2%
CS
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–23


Part Number 2N4264
Description GENERAL PURPOSE TRANSISTOR
Maker Motorola
PDF Download

2N4264 Datasheet PDF






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