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2N461 Datasheet

PNP germanium transistor

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2N460, 2N461 (GERMANIUM)
CASE 31(1)
(TO-5)
Base connected to case
PNP germanium transistor for general purpose
in dustrial applications.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCB
45 Volts
Collector-Emitter Voltage (RBE = 1 K)
VCER
35 Volts
Emitter-Base Voltage
VEB
10 Volts
Collector Current
IC 400 mA
Collector Dissipation
at 25° C Case Temperature
Derate above 25° C
at 25° C Ambient Temperature
Derate above 25° C
Junction Temperature Range
PD
500 mW
6.7 mW/oC
225 mW
3.0 mW/oC
TJ
-65 to +100
°c
ELECTRICAL CHARACTERISTICS (Te = 250 e unless otherwise noted)
Characteristics
Collector-Base Cutoff Current
(V CB = 45 Vdc)
Symbol Min Typical Max
ICBO --- ---
15
Emitter-Base Cutoff Current
(V EB = -10 Vdc)
~BO --- ---
10
Collector-Emitter Voltage
(IC = 1 mAdc, RBE = 1 K)
Small-Signal Current Gain
(V CB = -6 Vdc, IE = 1 mAde, f = 1 kHz)
2N460
2N461
Small-Signal Current Gain
(V CB = -6 Vdc, IE = 1 mAdc, f = 1 kHz)
Reverse Voltage Ratio
(V CB = -6 Vdc, IE = 1 mAdc, f = 1 kHz)
Input Resistance
(VCB - -6 Vdc, IE = 1 mAdc, f =1 kHz)
Output Admittance
(V CB = -6 Vdc, IE = 1 mAdc, f = 1 kHz)
Frequency Cutoff
(V CE = -5 Vdc, IE = 1 mAdc)
Output Capacitance
(V CB = -10 Vdc, IE = 1 mAde, f = 1 MHz)
2N460
2N461
2N460
2N461
2N460
2N461
2N460
2N461
2N460
2N461
Noise Figure
(VCE = -4.5 Vdc, IE =0.5 mAdc, R = 1 K, f = 1 kHz)2N460
g 2N461
BV C E R
hfb
hfe
hrb
hib
hob
fab
Cob
NF
35
0.94
0.955
17
31
------
25
25
------
---
---
---
------
---
0.96
0.968
---
2.0
3.0
30
---
0.8
0.5
1.2
4'.0
20
5.0
4.0
---
0.972
0.988
36
200
15
15
40
40
1.5
1.5
---
---
---
------
Unit
/JAdc
/lAdc
Vdc
---
---
X1O-4
Ohms
pmho
MHz
pF
dB
2-38


Part Number 2N461
Description PNP germanium transistor
Maker Motorola
Total Page 1 Pages
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