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Motorola Electronic Components Datasheet

2N4910 Datasheet

Medium-power NPN silicon transistors

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2N4910 thru 2N4912 (SILICON)
~~CASE 80
- <d»
(TO-66)
Medium-power NPN silicon transistors designed
for driver circuits, switching, and amplifier applica-
tions. Complement to PNP 2N4898 thru 2N4900.
Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous*
Base Current - Continuous
Total Device Dissipation T C = 25 0 C
Derate above 250 C
Operating & Storage Junction
Temperature Range
Symbol 2N4910 2N4911 2N4912
VCEO 40 60
80
VCB
VEB
IC*
40 60
-5.0
_1.0
-4.0
..IB -1.0
P D 25
80
..
...
....
-0.143-
TJ' Tstg --65 to +200-
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
mW/oC
°c
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case eJC
Max
7.0
Unit
°C/W
* The 1. 0 Amp maximum IC value is based upon JEDEC current gain requirements.
The 4.0 Amp maximum value is based upon actual current-handling capability of the device
(see Figure 5).
FIGURE 1- PDWER·TEMPERATURE DERATING CURVE
""5
0 "-1"-
5 ""-
~
r-....
"'i'o.,.
"5.0 "'-
'"20 40 60 80 100 120 140 160 180 200
Teo CASE TEMPERATURE lOCI
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
2-852


Motorola Electronic Components Datasheet

2N4910 Datasheet

Medium-power NPN silicon transistors

No Preview Available !

2N4910 thru 2N4912 (continued)
ELECTRICAL CHARACTERISTICS ,T, = ,,·c ",." ,1h'M'" oo,od,
Characteristic
OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage' (1)
(IC =O.IAde, IB =0)
2N4910
2N4911
2N4912
Collector Cutoff Current
(VCE = 20 Vde, IB = 0)
2N4910
(VCE = 30 Vde, IB = 0)
2N4911
(V CE =40Vde, IB =0)
2N4912
- BVCEO(suS)
40
60
80
Vde
-
--
- ICEO
-
mAde
0.5
- 0.5
- 0.5
Collector Cutoff Current
(V CE = Rated VCEO' VEB(olf) = I. 5 Vde)
12 ICEX
mAde
0.1
(V CE = Rated VCEO' VEB(olf) = I. 5 Vde, TC = 150'C)
- 1.0
Collector Cutoff Current
(V CB = Rated VCB ' ~ = 0)
-- ICBO
mAde
0.1
Emitter C'Jtoff Current
(VEB = 5.0 Vde, IC =,0)
lEBO
mAde
1.0
ON CHARACTERISTICS 111
DC Current Gain
(lC = 50 mAde, VCE = I. 0 Vde)
(IC = 500 mAde, VCE = 1. 0 Vde)
(IC = 1. 0 Ade, VCE = I. 0 Vde)
Collector-Emitter Saturation Voltage
(IC = 1. 0 Ade, IB = O. lAde)
Base-Emitter Saturation Voltage
(IC = 1. 0 Ade, IB = O. lAde)
Base-Emitter On Voltage
(IC = I. 0 Ade, VCE = I. 0 Vde)
8 hFE
40
20 100
10
-
9 VCE(sat)
11
13
11
13
VBE(sat)
-
-
Vde
0.6
Vde
1.3
11
13
VBE(on)
-
Vde
1.3
SMALL SIGNAL CHARACTERISTICS
Current -Gain - Bandwidth Product
(IC = 250 mAde, VCE = 10 Vde, 1= 1. 0 MHz)
Output Capacitance
(VCB = 10 Vde, ~ = 0, I = 100 kHz)
Small-Signal Current Gain
(IC =250 mAde, VCE = 10Vde, I = 1. 0 kHz)
- IT
-3.0
MHz
- COb
-
pF
100
- hIe 25 -
C1) Pulse Test: PW::; 300 ~s, Duty Cycle::; 2',0%
FIGURE 2- SWITCHING TIME EQUIVALENT CIRCUIT
A P P RTUORN·OfN\PXULS,E
+l1V,
v,. - II I,
-------
I
VU(off)
I
"APPROX
+llV
I,
Vee 0--_-,
RL
V,.o-_ _t-f
- 4.0 V
It " 15 ns
100 < t, " 500 iJ.s
I," 15ns
DUTY CYCLE" 2.0%
APPROX 9.0 V
t, l - -
TURN·OFF PULSE
FIGURE 3- TURN·ON TIME
5.0
I...,3.0 Vee ~ 30V
2.0
....... lell, ~ 2? I ~.'
...... ~
Vee ~ 60 V
lell; ~I\O~ UN~EssINJTJO~
I I TJ = +250C
___ TJ ~ +150'C
~
]. LO
~~
.., 0.7
~ 0.5 Vee 30 V
I,
~ ~~0.3
Vee 60 V
VeE/offl 2.0V
0.2 ~
II ,...
O. 1 Vee 30 V
r-.
0.07 VIE/off) 0
0.05
10 20 30 50 70
100
200 300 500 700 1000
Ie. COLLECTOR CURRENT {mAl
2-853


Part Number 2N4910
Description Medium-power NPN silicon transistors
Maker Motorola
Total Page 4 Pages
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