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2N4926 - AMPLIFIER TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v CEO VCBO VEBO •c PD 2N4926 2N4927 200 250 200 250 7.0 50 1.0 5.71 Pd TJ' Tstg 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R ftJC R 0JA Max 35 175 Unit °C/W °C/W 2N4926 2N4927 CASE 79, STYLE 1 TO-39 (TO-205AD) AMPLIFIER TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
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