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2N5031 - HIGH FREQUENCY TRANSISTOR

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2N5031 2N5032 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation AT(a< = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO •c PD TJ< Tstg Value 10 15 3.0 20 200 1.14 - 65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c(l = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage (IC = 0.01 mAdc, El = 0) Emitter-Base Breakdown Voltage E(l = 0.01 mAdc, lc = 0) Collector Cutoff Current (Vcb = 6.
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