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2N5108 - HIGH FREQUENCY TRANSISTOR

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2N5108 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (Rbe = 10(7) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a Tq = 25°C Derate above 25°C Storage Temperature Symbol vCEO VCER v CBO v EBO •c PD Tstg Value 30 55 55 3.0 0.4 3.5 0.02 - 65 to + 200 Unit Vdc Vdc Vdc Vdc Adc Watts mW/°C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON w ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 5.0 mAdc, Rgg = 10 ohms) Collector-Base Breakdown Voltage dC = 0.1 mAdc, Ig = 0) Emitter-Base Breakdown Voltage (Ig = 0.
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