Datasheet4U Logo Datasheet4U.com

2N5415 - PNP Transistor

This page provides the datasheet information for the 2N5415, a member of the 2N5416 PNP Transistor family.

📥 Download Datasheet

Datasheet preview – 2N5415

📁 Similar Datasheet

  • 2N5415 - PNP high-voltage transistors (NXP)
  • 2N5415 - SILICON PNP TRANSISTORS (STMicroelectronics)
  • 2N5415 - High Voltage Silicon Transistor (VPT)
  • 2N5415 - Silicon PNP Power Transistor (Inchange Semiconductor)
  • 2N5415 - (2N5415 / 2N5416) PNP SILICON HIGH VOLTAGE TRANSISTOR (CDIL)
  • 2N5415 - SILICON PNP TRANSISTORS (Central Semiconductor)
  • 2N5415 - PNP Silicon Low-Power Transistor (Microsemi)
  • 2N5415 - SILICON PNP TRANSISTORS (TT)
  • 2N5415CSM4 - PNP PLANAR EPITAXIAL TRANSISTOR (Seme LAB)
  • 2N5415S - Silicon Planar Epitaxial PNP Transistor (STMicroelectronics)
Other Datasheets by Motorola
  • 2N5416 - PNP Transistor
  • 2N5400 - AMPLIFIER TRANSISTOR
  • 2N5401 - AMPLIFIER TRANSISTOR
  • 2N5431 - PN UNIJUNCTION TRANSISTOR
  • 2N5457 - GENERAL PURPOSE JFET
  • 2N5458 - GENERAL PURPOSE JFET
  • 2N5459 - GENERAL PURPOSE JFET
  • 2N5484 - JFET VHF/UHF AMPLIFIER

Full PDF Text Transcription

Click to expand full text
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ Ta = 50°C Derate above 50°C Operating and Storage Junction Temperature Range PIMP NPN Symbol 2N5415 2N5416 2N3439 2N3440 vCEO 200 300 350 250 v CBO 200 350 450 300 VEBO 4.0 6.0 7.0 7.0 'B 0.5 ic 1.0 Unit Vdc Vdc Vdc Adc Adc PD PD PD TJ- Tstg - 1.0 5.7 10 5.0 57 28.6 - 1.0 6.7 - 65 to + 200 Watts mW/'C Watts mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol Rejc R 0JA 2N5415 2N3439 2N5416 2N3440 17.
Published: |