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2N5583 - HIGH FREQUENCY TRANSISTOR

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2N5583 JAN, JTX, JTXV AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR PNP SILICON fc MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO VCBO v EBO "C PD Pd TJ< Tstg Value 30 30 3.0 500 1.0 5.71 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
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