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2N5943 - HIGH FREQUENCY TRANSISTOR

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2N5943 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation (w Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v CEO v CBO v EBO "C PD Pd TJ' Tstg Value 30 40 3.5 400 1.0 5.7 3.5 0.02 -65 to +200 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Irj = 5.
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