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2N5947 - HIGH FREQUENCY TRANSISTOR

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2N5947 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tc = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO v EBO ic PD Tstg Value 30 40 3.5 400 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C CASE 244A-01, STYLE 1 TO-117 (TO-232AA) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (Ic = 20 mAdc, Ib = 0) Collector-Base Breakdown Voltage (Ic = 100 /uAdc, lg = 0) Emitter-Base Breakdown Voltage (lg .
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