Datasheet4U Logo Datasheet4U.com

2N6255 - HIGH FREQUENCY TRANSISTOR

📥 Download Datasheet

Datasheet preview – 2N6255

📁 Similar Datasheet

  • 2N6255 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
  • 2N6255 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
  • 2N6250 - NPN SILICON TRANSISTOR (Central Semiconductor Corp)
  • 2N6250 - Silicon Power Transistor (SavantIC)
  • 2N6250 - NPN POWER SILICON TRANSISTOR (Microsemi)
  • 2N6250 - NPN Darlington Power Silicon Transistor (VPT)
  • 2N6250 - NPN Darlington Power Silicon Transistor (MA-COM)
  • 2N6250 - Bipolar NPN Device (Seme LAB)
  • 2N6250 - SILICON NPN Transistor (Toshiba)
  • 2N6251 - NPN SILICON TRANSISTOR (Central Semiconductor Corp)
Other Datasheets by Motorola
  • 2N6251 - High Voltage NPN Silicon Power Transistors
  • 2N6256 - UHF AMPLIFIER TRANSISTOR
  • 2N6237 - SIlicon Controlled Rectifiers
  • 2N6238 - SIlicon Controlled Rectifiers
  • 2N6239 - SIlicon Controlled Rectifiers
  • 2N6240 - SIlicon Controlled Rectifiers
  • 2N6241 - SIlicon Controlled Rectifiers
  • 2N6274 - High Power NPN SIlicon Transistor

Full PDF Text Transcription

Click to expand full text
2N6255 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Jq = 25°C Derate above 25°C Storage Temperature Symbol vCEO v CBO v EBO ic PD Tstg Value 18 36 4.0 1.0 5.0 28.5 -65 to +200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Typ OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ib = 0) Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, Vbe = 0) Emitter-Base Breakdown Voltage (IE = 1.
Published: |