2N6275 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial- military power amplifer and switching circuit applications. - High Collector Emitter Sustaining - VCEO(sus) = 100 Vdc (Min) - 2N6274 VCEO(sus) = 120 Vdc (Min) - 2N6275 VCEO(sus) = 150 Vdc (Min) - 2N6277 - High DC Current Gain - h FE = 30- 120 @ IC = 20 Adc h FE = 10 (Min) @ IC = 50 Adc - Low Collector- Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 20 Adc - Fast Switching Times @ IC 20 Adc tr = 0.35 µs (Max) ts = 0.8 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtf = 0.25 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ- plement to 2N6377- 79 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector- Base Voltage Collector- Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter...