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2N6304 - HIGH FREQUENCY TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (5 T"a = 25°C Derate above 25°C Storage Temperature Symbol VCEO VCBO VEBO ic pd Tstg Value 15 30 3.0 50 200 1.14 -65 to +200 Unit Vdc Vdc Vdc mAdc mW mW/X °C 2N6304 2N6305 CASE 20-03, STYLE 10 TO-72 (TO-206AF) HIGH FREQUENCY TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, In. = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, Ie = 0) Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, Ic = 0) Collector Cutoff Current (Vcb = 5.0 Vdc, Ie = 0) ON CHARACTERISTICS DC Current Gain dC = 2.0 mAdc, Vqe = 5.
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