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2N6604 - HIGH FREQUENCY TRANSISTOR

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2N6604 JAN, JTX, JTXV AVAILABLE CASE 303-01, STYLE 1 HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS (TA = 25°C Free Air Temperature) Rating Symbol Value Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Tq = 125°C Derate above 125°C Storage Temperature VCEO VCBO Vebo "c pd Tstg 15 25 3.0 50 500 6.66 - 65 to + 200 Unit Vdc Vdc Vdc mAdc mW mW/X °C 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.! Characteristic Symbol Min Typ Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, Bl = 0) Collector-Base Breakdown Voltage dC = 0.1 mAdc, Ie = 0) Emitter-Base Breakdown Voltage (IE = 0.
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