2N721 - PNP silicon annular transistor

Motorola

Datasheet Details

Part number	2N721
Manufacturer	Motorola
File Size	97.93 KB
Description	PNP silicon annular transistor
Datasheet	2N721 Datasheet
Additional preview pages of the 2N721 datasheet.

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Full PDF Text Transcription

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121 2N (SILICON) PNP silicon annular transistor for high-frequency general-purpose amplifier applications. CASE 22 (TO.18) Collector connected to case MAXIMUM RAilNGS Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Total Device Dissipation @ TA=25°C (Derate above 25DC) VCEO VCER VCB VEB PD Total Device Dissipation @ TC",25°C P D (Derate above 25°C) TC =100°C Operating & Stbrage Junction Temperature Range TJI Tstg Value 35 50 50 5.0 0.40 2.67 1.5 0.75 10 -65 to +200 Unit Vdc Vdc Vdc Vdc Watts mW!OC Watts mW/oC DC 2-83 2N721 (continued) ELECTRICAL CHARACTERISTICS cr. = 25'C ...... _ ..

Published: Nov 8, 2018 |