• Part: 2N916
  • Description: NPN silicon annular transistor
  • Manufacturer: Motorola Semiconductor
  • Size: 30.39 KB
Download 2N916 Datasheet PDF

Datasheet Summary

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (S Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO Pd Pd TJ- Tstg Value 25 45 5 0.36 2.06 1.2 6.9 - 65 to + 200 Unit Vdc Vdc Vdc Watts mWVC Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltaged) Oc = 30 mA, Ib = 0) Collector-Base Breakdown Voltage Oc = 10 mA, Ie = 0) Emitter-Base Breakdown Voltage (Ie = 10 fjA, lc = 0) Collector Cutoff Current (Vqb = 30 V, lg = 0)...