2N916 Datasheet (Motorola) - NPN silicon annular transistor

2N916, NPN silicon annular transistor

2N916 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (S Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO Pd Pd TJ- Tstg Value 25 45 5 0.36 2.06 1.2 6.9 - 65 to + 200 Unit Vdc Vdc Vdc Watts mWVC Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Em