BC239C Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors Order this document by BC237/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC237,A,B,C BC238B,C BC239,C MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC 237 45 50 6.0 BC 238 25 30 5.0 100 350 2.8 1.0 8.0 - 55 to +150 BC 239 25 30 5.0 Unit Vdc Vdc Vdc m Adc m W m W/°C Watts m W/°C °C 1 2 3 CASE 29- 04, STYLE 17 TO- 92 (TO- 226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 357 125 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 2.0 m A, IB = 0) Emitter - Base Breakdown Voltage (IE = 100 m A, IC = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) BC237 BC238 BC239 BC237 BC238 BC239 BC238 BC239 BC237 BC238 BC239 BC237 V(BR)CEO 45 25 25 6.0 5.0 5.0 - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2...