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BDW47 - DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDW42/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 (typ.) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min.) — BDW46 VCEO(sus) = 100 Vdc (min.) — BDW42/BDW47 • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max.) @ IC = 5.0 Adc VCE(sat) = 3.0 Vdc (max.) @ IC = 10.
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