Datasheet4U Logo Datasheet4U.com

BFR91 - HIGH FREQUENCY TRANSISTOR

📥 Download Datasheet

Datasheet preview – BFR91

📁 Similar Datasheet

  • BFR91 - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFR91 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
  • BFR91 - NPN Silicon High-Frequency Transistor (PLANETA)
  • BFR91 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
  • BFR91A - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFR91A - The RF Line NPN Silicon High-Frequency Transistor (Planeta)
  • BFR91G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
  • BFR90 - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFR90 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi Corporation)
  • BFR90 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Advanced Power Technology)
Other Datasheets by Motorola

Full PDF Text Transcription

Click to expand full text
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a Ta = 60°C Derate above 60°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol vCEO VCBO v EBO ic PD TstQ Symbol R 0JA Value 12 15 3.0 35 180 2.0 -65 to +150 Max 500 Unit Vdc Vdc Vdc mAdc mW mW/°C "C Unit °C/W BFR91 CASE 317A-01, STYLE 2 HIGH FREQUENCY TRANSISTOR NPN SILICON j*C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC - 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 0.1 mAdc, l£ = 0) Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, Ic = 0) Collector Cutoff Current (VCB = 5.0.
Published: |