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Motorola Electronic Components Datasheet

BSS79B Datasheet

GENERAL PURPOSE TRANSISTOR

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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Symbol
v CEO
v CBO
VEBO
"C
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
Storage Temperature
T stg
•Thermal Resistance Junction to Ambient
R 0JA
•Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
Value
40
75
6.0
100
Max,
350
2.8
150
357
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
c(l = 10 mAdc)
Collector-Base Breakdown Voltage
dC = 10 jiAdc)
Emitter-Base Breakdown Voltage
E(l = 10 /iAdc)
Collector Cutoff Current
(Vcb = 60 Vdc)
(Vcb = 60 Vdc, TA = 150°C)
Emitter Cutoff Current
(Vbe = 3.0 Vdc)
ON CHARACTERISTICS
DC Current Gain
c(l = 150 mAdc, Vqe
10 Vdc)
Collector-Emitter Saturation Voltage
dC = 150 mAdc, Ib = 15 mAdc)
dC = 500 mAdc, Ib = 50 mAdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(Vce = 20 Vdc, lc = 20 mAdc, f = 100 MHz)
Output Capacitance
(Vqb = Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay Time
(Vcc = 30 Vdc, lc = 150 mAdc)
OBI - lB2 = 15 mAdc)
Rise Time
(Vcc
=
30
Vdc
-
'C
=
15° mAdc)
(IB1 = lB2 = I 5 mAdc)
Storage Time
(Vcc
=
30
Vdc
'
'C
=
15
Obi = Ib2 = 15 mAdc)
mAdc)
Fall Time
(Vcc
=
30
vdc
'
'C
=
150 mAdc)
< l B1 = *B2 = 15 mAdc)
BSS79B,C
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
!CBO
Min
40
75
6.0
lEBO
hFE
v CE(sat|
40
100
*T
C bo
250
Unit
Vdc
nAdc
^Adc
nAdc
120
300
0.3
1.0
MHz
pF
td
60
3-39


Part Number BSS79B
Description GENERAL PURPOSE TRANSISTOR
Maker Motorola
Total Page 1 Pages
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