Datasheet4U Logo Datasheet4U.com

BSS82C - GENERAL PURPOSE TRANSISTOR

Download the BSS82C datasheet PDF. This datasheet also covers the BSS82B variant, as both devices belong to the same general purpose transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSS82B-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BSS82C PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) Siemens Semiconductor Group
BSS82C PNP Silicon Switching Transistors Infineon Technologies AG
BSS82C (BSS82B/C) SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS Zetex Semiconductors
BSS82C PNP Silicon Switching Transistors Kexin
BSS82 PNP Transistors Infineon Technologies

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
BSS80B GENERAL PURPOSE TRANSISTOR
BSS80C GENERAL PURPOSE TRANSISTOR
BSS84LT1 Small-Signal MOSFET
BSS138LT1 N-Channel MOSFET
BSS50 DARLINGTON TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO THERMAL CHARACTERISTICS Characteristic Symbol 'Total Device Dissipation, T/ = 25°C Derate above 25°C PD Storage Temperature Tsto "Thermal Resistance Junction to Ambient RflJA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Value 60, 60 5.0 Max 350 2.8 150 357 Unit Vdc Vdc Vdc Unit mW mW/°C °C °C/W ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage C(l = 10 mA) Collector-Base Breakdown Voltage 0C= 10 MA) Emitter-Base Breakdown Voltage (IE = 10jiA) Collector Cutoff Current (VCB = 50 V) (VCB = 50 V, TA = 150°C) Emitter Cutoff Current (VEB = 3.