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BSX29 - PNP SILICON SWITCHING TRANSISTOR

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MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Tc = 100°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD 2.06 PD Tj, T s tg Symbol Rejc p>6»ja Value 12 12 5 200 .36 1.2 0.686 6.86 -65 to +200 Max 146 486 Unit Vdc Vdc Vdc Amp Watt mW/°C Watt mW/°C °C Unit °C/W °c/w ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.