MBR150 Datasheet | Motorola Semiconductor

MOTOROLA .. SEMICONDUCTOR TECHNICAL DATA Order this document by MBR150/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. - - - - Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction MBR150 MBR160 MBR160 is a Motorola Preferred Device SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 50, 60...