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MBRB3030CTL - Power Rectifier

Key Features

  • Features:.
  • Dual Diode Construction.
  • May be Paralleled for Higher Current Output.
  • Guardring for Stress Protection.
  • Low Forward Voltage Drop.
  • 125°C Operating Junction Temperature.
  • Maximum Die Size.
  • Short Heat Sink Tab Manufactured.
  • Not Sheared! Order this document by MBRB3030CTL/D MBRB3030CTL.

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Full PDF Text Transcription for MBRB3030CTL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MBRB3030CTL. For precise diagrams, and layout, please refer to the original PDF.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Switchmode™ Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal....

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e Schottky Barrier principle with a proprietary barrier metal.

📁 Similar Datasheet

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