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Motorola Electronic Components Datasheet

MBT3946DW1T1 Datasheet

Dual General Purpose Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual General Purpose Transistors
The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are
spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed
for general purpose amplifier applications and are housed in the SOT–363 six–leaded
surface mount package. By putting two discrete devices in one package, these
devices are ideal for low–power surface mount applications where board space is at
a premium.
hFE, 100–300
Low VCE(sat), 0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
MBT3904DW1T1
MBT3906DW1T1
MBT3946DW1T1
6 54
1
23
CASE 419B–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol Value
Collector – Emitter Voltage MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCEO
40
–40
Collector – Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VCBO
60
–40
Emitter – Base Voltage
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
VEBO
6.0
–5.0
Collector Current — Continuous
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
IC
200
–200
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation(1)
TA = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
150
RqJA
TJ, Tstg
833
– 55 to
+150
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
DEVICE MARKING
MBT3904DW1T1 = MA MBT3946DW1T1 = 46
MBT3906DW1T1 = A2
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C
MBT3904DW1T1
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
MBT3906DW1T1
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
MBT3946DW1T1*
(3) (2)
(1)
Q1 Q2
(4) (5)
(6)
*Q1 same as MBT3906DW1T1
Q2 same as MBT3904DW1T1
2–286
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

MBT3946DW1T1 Datasheet

Dual General Purpose Transistor

No Preview Available !

MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
(IC = –1.0 mAdc, IB = 0)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = –10 mAdc, IE = 0)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = –10 mAdc, IC = 0)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = –30 Vdc, VEB = –3.0 Vdc)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
MBT3904DW1T1 (NPN)
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
MBT3906DW1T1 (PNP)
MBT3904DW1T1 (NPN)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
Base – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
MBT3906DW1T1 (PNP)
MBT3904DW1T1 (NPN)
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
MBT3906DW1T1 (PNP)
Symbol
Min
Max Unit
V(BR)CEO
40
Vdc
–40 —
V(BR)CBO
60
Vdc
–40 —
V(BR)EBO
6.0
Vdc
–5.0 —
IBL nAdc
— 50
— –50
ICEX
nAdc
50
— –50
hFE
VCE(sat)
VBE(sat)
40
70
100
60
30
60
80
100
60
30
0.65
–0.65
300
300
0.2
0.3
–0.25
–0.4
0.85
0.95
–0.85
–0.95
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
2. Pulse Test: Pulse Width 300 µs; Duty Cycle 2.0%.
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
MBT3904DW1T1 (NPN)
MBT3906DW1T1 (PNP)
fT MHz
300 —
250 —
Cobo
pF
— 4.0
— 4.5
Cibo
pF
— 8.0
— 10.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–287


Part Number MBT3946DW1T1
Description Dual General Purpose Transistor
Maker Motorola
Total Page 10 Pages
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