MC33169
features include an idle mode input and a direct drive of the N- Channel drain switch transistor. This product is available in a 4.0 V version intended for control of the RF Power Amplifier in GSM, DCS1800 and PCS applications.
Ga As POWER AMPLIFIER SUPPORT IC
SEMICONDUCTOR TECHNICAL DATA
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Negative Regulated Output for Full Depletion of Ga As MESFETs Drain Switch Priority Management Circuit CMOS patible Inputs Idle Mode Input (Standby Mode) for Very Low Current Consumption Output Signal Directly Drives N- Channel FET Low Startup and Operating Current
1 14
DTB SUFFIX PLASTIC PACKAGE CASE 948G (TSSOP- 14)
PIN CONNECTIONS
Simplified Block Diagram
+ VBB Double 12 +
- - C1 VBB 11 3 Triple + C4
- Tx Power Control 9 Input 13 Idle Mode Input 6 Gnd 2 C3 + + C2 1 VCC 14 8
C2 Input 1 C1/C2 VBattery (2.7 to 7.0 V) C1 Input 2 3
13 Idle Mode Input 12 VBB Double 11 VBB Triple 10 Sense Input 9 8 (Top View) Tx Power Control Input Gate Drive Output
VBB Generator
(Voltage...
