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Motorola Electronic Components Datasheet

MCM6229B Datasheet

256K x 4 Bit Static Random Access Memory

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MOTOROLA
• SEMICONDUCTOR
TECHNICAL DATA
Product Preview
256K x 4 Bit Static Random
Access Memory
The MCM6229B is a 1,048,576 bit static random access memory organized as
262,144 words of 4 bits, fabricated using high-performance silicon-gate CMOS technol-
ogy. Static design eliminates the need for external clocks or timing strobes, while CMOS
circuitry reduces power consumption and provides for greater reliability.
The MCM6229B is equipped with both chip enable (E) and output enable (<3) pins,
allowing for greater system flexibility and eliminating bus contention problems. Eiiher
input, when high, will force the outputs to high impedance.
The MCM6229B is available in 300 mil and 400 mil, 28-lead surface-mount SOJ
packages.
• Single 5 V ± 10% Power Supply
• Fast Access Times: 15/17/20/25/35 ns
• Equal Address and Chip Enable Access Times
• All Inputs and Outputs are TIL Compatible
• Three-State Outputs
• Low Power Operation: 120/115/110/105/100 mA Maximum, Active AC
BLOCK DIAGRAM
MEMORY MATRIX
• 512 ROWS x
2D48 COLUMNS
DOD
D03 --.-t-1
COLUMN DECODER
A2 A13 A12 A11 A16 AD A17 A1S A14
MCM6229B
J PACKAGE
300 MILSOJ
~ CASES'OB
~~ WJ PACKAGE
400 MILSOJ
CASE 810
PIN ASSIGNMENT
11
AD VCC
A1 A17
A2 A16
A3 A15
A4 A14
AS A13
A6 A12
A7 A11
AS NC'
A9 D03
A1D D02
E D01
G DOD
VSS W
PIN NAMES
AO - A17 ............. Address Inputs
Vi ..................... Write Enable
G ................... Output Enable
E . . . . . . . . . . . . . . . . . . . . .. Chip Enable
DO~ - D03 . . . . .. Data Inputs/Outputs
VCC ............. + 5 V Power Supply
VSS ....................... Ground
NC .................. No Connection
"If not used for no connect, then do not ex-
ceed voltages of - 0.5 to VCC + 0.5 V.
This pin is used for manufacturing diag-
nostics.
This document contains information on a new product under development. Motorola reserves the right to change or discontinue this product without notice.
MOTOROLA FAST SRAM DATA
MCM6229B
3-77


Motorola Electronic Components Datasheet

MCM6229B Datasheet

256K x 4 Bit Static Random Access Memory

No Preview Available !

TRUTH TABLE
EGW
Mode
H X X Not Selected
L H H Output Disabled
LLH
Read
LX L
Write
H =High, L =Low, X =Don't Care
I/O Pin
High-Z
High-Z
Dout
Din
Cycle
-
-
Read
Write
Current
ISB1,ISB2
ICCA
ICCA
ICCA
ABSOLUTE MAXIMUM RATINGS (See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage Relative to VSS
VCC
-0.5 to 7.0
V
Voltage Relative to VSS for Any Pin
ExceptVcc
Yin, Vout - 0.5 to VCC + 0.5
V
Output Current (pet 110)
lout
±20
mA
Power Dissipation
PD 1.1 W
Temperature Under Bias
Operating Temperature
Tbias
TA
-10to+B5
Oto + 70
°C
°C
Storage Temperature
Tstg
-55 to + 150
°C
NOTE: Permanent device damage may occur If ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high-impedance
circuits.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear feet
per minute is maintained.
DC OPERATING CONDITIONS AND CHARACTERISTICS
= =(Vee 5.0 V ± 10%, TA 0 to 70oe, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage (Operating Voltage Range)
Input High Voltage
Input Low Voltage
·VIL (min) = - 0.5 V dc; VIL (min) = - 2.0 V ac (pulse Width s 20 ns).
**VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width s 20 ns).
Symbol
VCC
VIH
VIL
Min
4.5
2.2
-0.5*
Max
5.5
VCC + 0.3**
O.B
Unit
V
V
V
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
=Input Leakage Current (All Inputs, Yin 0 to VCC)
= =Output Leakage Current (E VIH, Vout 0 to VCC)
= =AC Active Supply Current (lout 0 mA, VCC max)
= = =AC Standby Current (VCC max, E VIH, f fmax)
=MCM6229B-15: tAVAV 15 ns
=MCM6229B-17: tAVAV 17 ns
=MCM6229B-20: tAVAV 20 ns
=MCM6229B-25: tAVAV 25 ns
=MCM6229B-35: tAVAV 35 ns
=MCM6229B-15: tAVAV 15 ns
=MCM6229B-17: tAVAV 17 ns
=MCM6229B-20: tAVAV 20 ns
=MCM6229B-25: tAVAV 25 ns
=MCM6229B-35: tAVAV 35 ns
CMOS Standby Current (E ~ VCC - 0.2 V, Yin s VSS + 0.2 V
= =or~ VCC - 0.2 V, VCC max, f 0 MHz)
=Output Low Voltage (IOL + B.O mAl
=-Output High Voltage (lOH 4.0 mAl
Symbol
Ilkg(l)
Ilkg(O)
ICCA
ISB1
ISB2
VOL
VOH
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.4
Max
±1
±1
120
115
110
100
95
35
35
30
25
20
15
0.4
-
Unit
IlA
IlA
mA
mA
mA
V
V
MCM6229B
3-78
MOTOROLA FAST SRAM DATA


Part Number MCM6229B
Description 256K x 4 Bit Static Random Access Memory
Maker Motorola
Total Page 7 Pages
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