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MCM69L818A - 4M Late Write HSTL

Download the MCM69L818A datasheet PDF. This datasheet also covers the MCM69L818AZP10.5 variant, as both devices belong to the same 4m late write hstl family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MCM69L818AZP10.5_MotorolaInc.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MCM69L817 256K x 18 Bit Data Latch BurstRAM Synchronous Fast Static RAM
MCM69L819A 4M Late Write HSTL
MCM69L820A 4M Late Write 2.5V I/O
MCM69L735 128K x 36 Bit Data Latch BurstRAM Synchronous Fast Static RAM
MCM69L736A 4M Late Write HSTL

Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 4M Late Write HSTL The MCM69L736A/818A is a 4M synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM69L818A (organized as 256K words by 18 bits) and the MCM69L736A (organized as 128K words by 36 bits) are fabricated in Motorola’s high performance silicon gate BiCMOS technology. The differential clock (CK) inputs control the timing of read/write operations of the RAM. At the rising edge of CK, all addresses, write enables, and synchronous selects are registered. An internal buffer and special logic enable the memory to accept write data on the rising edge of CK a cycle after address and control signals.
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