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Motorola Electronic Components Datasheet

MCM69L818A Datasheet

4M Late Write HSTL

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
4M Late Write HSTL
The MCM69L736A/818A is a 4M synchronous late write fast static RAM
designed to provide high performance in secondary cache and ATM switch,
Telecom, and other high speed memory applications. The MCM69L818A
(organized as 256K words by 18 bits) and the MCM69L736A (organized as 128K
words by 36 bits) are fabricated in Motorola’s high performance silicon gate
BiCMOS technology.
The differential clock (CK) inputs control the timing of read/write operations of
the RAM. At the rising edge of CK, all addresses, write enables, and synchronous
selects are registered. An internal buffer and special logic enable the memory to
accept write data on the rising edge of CK a cycle after address and control
signals. Read data is available at the falling edge of CK.
The RAM uses HSTL inputs and outputs. The adjustable input trip–point (Vref)
and output voltage (VDDQ) gives the system designer greater flexibility in
optimizing system performance.
The synchronous write and byte enables allow writing to individual bytes or the
entire word.
The impedance of the output buffers is programmable, allowing the outputs to
match the impedance of the circuit traces which reduces signal reflections.
Byte Write Control
Single 3.3 V +10%, – 5% Operation
HSTL — I/O (JEDEC Standard JESD8–6 Class I)
HSTL — User Selectable Input Trip–Point
HSTL — Compatible Programmable Impedance Output Drivers
Register to Latch Synchronous Operation
Asynchronous Output Enable
Boundary Scan (JTAG) IEEE 1149.1 Compatible
Differential Clock Inputs
Optional x18 or x36 Organization
MCM69L736A/818A–7.5 = 7.5 ns
MCM69L736A/818A–8.5 = 8.5 ns
MCM69L736A/818A–9.5 = 9.5 ns
MCM69L736A/818A–10.5 = 10.5 ns
119 Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Plastic Ball Grid Array
(PBGA) Package
Order this document
by MCM69L736A/D
MCM69L736A
MCM69L818A
ZP PACKAGE
PBGA
CASE 999–01
This document contains information on a new product. Specifications and information herein are subject to change without notice.
4/3/97
M© OMoTtoOroRla,OInLc.A19F97AST SRAM
MCM69L736AMCM69L818A
1


Motorola Electronic Components Datasheet

MCM69L818A Datasheet

4M Late Write HSTL

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FUNCTIONAL BLOCK DIAGRAM
SA ADDRESS
REGISTERS
MEMORY
ARRAY
DATA IN
REGISTER
DATA OUT
LATCH
SW SW
REGISTERS
SBx
CK
G
SS
SS REGISTERS
CONTROL
LOGIC
DQ
PIN ASSIGNMENTS
TOP VIEW
MCM69L736A
MCM69L818A
1 2 34 5 6 7
1 2 34 5 6 7
A
VDDQ SA SA NC SA SA VDDQ
B
NC NC SA NC SA NC NC
C
NC SA SA VDD SA SA NC
D
DQc DQc VSS ZQ VSS DQb DQb
E
DQc DQc VSS SS VSS DQb DQb
F
VDDQ DQc VSS G VSS DQb VDDQ
G
DQc DQc SBc NC SBb DQb DQb
H
DQc DQc VSS NC VSS DQb DQb
J VDDQ VDD Vref VDD Vref VDD VDDQ
K
DQd DQd VSS CK VSS DQa DQa
L
DQd DQd SBd CK SBa DQa DQa
M
VDDQ DQd VSS SW VSS DQa VDDQ
N
DQd DQd VSS SA VSS DQa DQa
P
DQd DQd VSS SA VSS DQa DQa
R
NC SA VDD VDD VSS SA NC
T
NC NC SA SA SA NC ZZ
U
VDDQ TMS TDI TCK TDO NC VDDQ
A
VDDQ SA SA NC SA SA VDDQ
B
NC NC SA NC SA NC NC
C
NC SA SA VDD SA SA NC
D
DQb NC VSS ZQ VSS DQa NC
E
NC DQb VSS SS VSS NC DQa
F
VDDQ NC VSS G VSS DQa VDDQ
G
NC DQb SBb NC VSS NC DQa
H
DQb NC VSS NC VSS DQa NC
J
VDDQ VDD Vref VDD Vref VDD VDDQ
K
NC DQb VSS CK VSS NC DQa
L
DQb NC VSS CK SBa DQa NC
M
VDDQ DQb VSS SW VSS NC VDDQ
N
DQb NC VSS SA VSS DQa NC
P
NC DQb VSS SA VSS NC DQa
R
NC SA VDD VDD VSS SA NC
T
NC SA SA NC SA SA ZZ
U
VDDQ TMS TDI TCK TDO NC VDDQ
MCM69L736AMCM69L818A
2
MOTOROLA FAST SRAM


Part Number MCM69L818A
Description 4M Late Write HSTL
Maker Motorola
Total Page 20 Pages
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