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Motorola Electronic Components Datasheet

MCR12DCM Datasheet

Silicon Controlled Rectifiers

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR12DCM/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
MCR12DCM
MCR12DCN
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
G
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MCR12DCN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MCR12DCNT4
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MCR12DCN–1
A
K
SCRs
12 AMPERES RMS
600 thru 800 VOLTS
A
K
AG
CASE 369A–13
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 125°C)
MCR12DCM
MCR12DCN
Symbol
VDRM
VRRM
Value
600
800
Unit
Volts
On–State RMS Current
(All Conduction Angles; TC = 90°C)
Average On–State Current (All Conduction Angles; TC = 90°C)
Peak Non–Repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width 10 msec, TC = 90°C)
Average Gate Power
(t = 8.3 msec, TC = 90°C)
Peak Gate Current (Pulse Width 10 msec, TC = 90°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
IT(RMS)
IT(AV)
ITSM
I2t
PGM
PG(AV)
IGM
TJ
Tstg
12
7.6
100
41
5.0
0.5
2.0
–40 to 125
–40 to 150
Amps
A2sec
Watts
Amps
°C
Characteristic
Symbol
Max Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (2)
RqJC
RqJA
RqJA
2.2 °C/W
88
80
Maximum Lead Temperature for Soldering Purposes (3)
TL 260 °C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1997
1


Motorola Electronic Components Datasheet

MCR12DCM Datasheet

Silicon Controlled Rectifiers

No Preview Available !

MCR12DCM MCR12DCN
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristics
Peak Forward Blocking Current
Peak Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
Peak On–State Voltage (1)
(ITM = 24 A)
Gate Trigger Current (Continuous dc)
W(VD = 12 V, RL = 100 , TJ = 25°C)
W(VD = 12 V, RL = 100 , TJ = –40°C)
Gate Trigger Voltage (Continuous dc)
W(VD = 12 V, RL = 100 , TJ = 25°C)
W(VD = 12 V, RL = 100 , TJ = –40°C)
W(VD = 12 V, RL = 100 , TJ = 125°C)
Holding Current
(VD = 12 V, IT = 200 mA, TJ = 25°C)
(VD = 12 V, IT = 200 mA, TJ = –40°C)
Latching Current
(VD = 12 V, IG = 20 mA, TJ = 25°C)
(VD = 12 V, IG = 40 mA, TJ = –40°C)
DYNAMIC CHARACTERISTICS
TJ = 25°C
TJ = 125°C
Characteristics
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
(1) Pulse Test; Pulse Width 2.0 msec, Duty Cycle 2%.
Symbol
IDRM
IRRM
VTM
IGT
VGT
IH
IL
Symbol
dv/dt
Min Typ Max Unit
mA
— — 0.01
— — 5.0
Volts
— 1.4 2.1
mA
2.0 7.0 20
— — 40
Volts
0.5 0.65 1.0
— — 2.0
0.2 —
mA
4.0 22 40
— — 80
mA
4.0 22 40
— — 80
Min Typ Max Unit
V/ms
50 200 —
2 Motorola Thyristor Device Data


Part Number MCR12DCM
Description Silicon Controlled Rectifiers
Maker Motorola
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MCR12DCM Datasheet PDF






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