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Motorola Electronic Components Datasheet

MCR12DSN Datasheet

Silicon Controlled Rectifiers

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR12DSM/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
MCR12DSM
MCR12DSN
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
G
To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MCR12DSN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MCR12DSNT4
To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MCR12DSN–1
A
K
SCRs
12 AMPERES RMS
600 thru 800 VOLTS
A
K
AG
CASE 369A–13
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (1)
Peak Repetitive Reverse Voltage
W(TJ = –40 to 110°C, RGK = 1.0 K )
MCR12DSM
MCR12DSN
Symbol
VDRM
VRRM
Value
600
800
Unit
Volts
On–State RMS Current
(All Conduction Angles; TC = 75°C)
Average On–State Current (All Conduction Angles; TC = 75°C)
Peak Non–Repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
IT(RMS)
IT(AV)
ITSM
I2t
Amps
12
7.6
100
41 A2sec
Peak Gate Power
m(Pulse Width 10 sec, TC = 75°C)
Average Gate Power
(t = 8.3 msec, TC = 75°C)
mPeak Gate Current (Pulse Width 10 sec, TC = 75°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
5.0
0.5
2.0
–40 to 110
–40 to 150
Watts
Amps
°C
Characteristic
Symbol
Max Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (2)
RqJC
RqJA
RqJA
2.2 °C/W
88
80
Maximum Lead Temperature for Soldering Purposes (3)
TL 260 °C
W(1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 K ; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that
the voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
© Motorola, Inc. 1997
1


Motorola Electronic Components Datasheet

MCR12DSN Datasheet

Silicon Controlled Rectifiers

No Preview Available !

MCR12DSM MCR12DSN
WELECTRICAL CHARACTERISTICS (TJ = 25°C; RGK = 1.0 K unless otherwise noted)
Characteristics
Symbol
Min Typ Max Unit
Peak Reverse Gate Blocking Voltage
m(IGR = 10 A)
Peak Forward Blocking Current
Peak Reverse Blocking Current
(VAK = Rated VDRM or VRRM) (1)
Peak Reverse Gate Blocking Current
(VGR = 10 V)
Peak On–State Voltage (2)
(ITM = 24 A)
Gate Trigger Current (Continuous dc) (3)
W(VD = 12 V, RL = 100 , TJ = 25°C)
W(VD = 12 V, RL = 100 , TJ = –40°C)
Gate Trigger Voltage (Continuous dc)
W(VD = 12 V, RL = 100 , TJ = 25°C)
W(VD = 12 V, RL = 100 , TJ = –40°C)
W(VD = 12 V, RL = 100 , TJ = 110°C)
Holding Current
(VD = 12 V, I(init) = 200 mA, TJ = 25°C)
(VD = 12 V, I(init) = 200 mA, TJ = –40°C)
Latching Current
(VD = 12 V, IG = 2.0 mA, TJ = 25°C)
(VD = 12 V, IG = 2.0 mA, TJ = –40°C)
DYNAMIC CHARACTERISTICS
TJ = 25°C
TJ = 110°C
VGRM
IDRM
IRRM
IRGM
VTM
IGT
VGT
IH
IL
Volts
10 12.5 18
mA
— — 10
— — 500
mA
— — 1.2
Volts
— 1.4 2.1
mA
5.0 12 200
— — 300
Volts
0.45 0.65
1.0
— — 1.5
0.2 —
mA
0.5 1.0 6.0
— — 10
mA
0.5 1.0 6.0
— — 10
Characteristics
Symbol
Min Typ Max Unit
Total Turn–On Time
W W(Source Voltage = 12 V, RS = 6.0 K , IT = 16 A(pk), RGK = 1.0 K )
m(VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 s)
tgt ms
— 2.0 5.0
Critical Rate of Rise of Off–State Voltage
dv/dt
V/ms
W(VD = 0.67 X Rated VDRM, Exponential Waveform,
RGK = 1.0 K , TJ = 110°C)
2.0 10 —
W(1) Ratings apply for negative gate voltage or RGK = 1.0 K . Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
(2) Pulse Test; Pulse Width 2.0 msec, Duty Cycle 2%.
(3) Does not include RGK current.
2 Motorola Thyristor Device Data


Part Number MCR12DSN
Description Silicon Controlled Rectifiers
Maker Motorola
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MCR12DSN Datasheet PDF






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