Click to expand full text
I
MCR1906=I
o thru MCR1906=6 I
I
I
REVERSE BLOCKING TRIODE THYRISTORS
These devices are glassivated planar construction designed for applications in control systems and sensing circuits where low-level gating and holding characteristics are necessary.
. Low-Level Gate Characteristics — IGT= 1.0 mA (Max) @Tc” = 25°C
@ Low Holding Current – IH = 5.0 mA (Max) @ Tc = 25°C
~.:. ~T”* ,,,{,~:’, . ,..)X>..,$, ”, ,.:s* ~‘,.,$. ,,,>,, ***
o
MAXIMUM RATINGS (T I = 100°C un[ess othe
v~~~
IT(RMS)
Value
25 50 100 200 300 400 500 600 1,6
o
‘eak Non-R~eti$ve Surge Current
(on$$~~?~b
Hz, TJ = -40to+110°C)
P‘~+~.1e.,%.’,,ak~n,d raW@urrent
followed by and voltage
‘*.
MCR1906-2 Datasheet
