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Motorola Electronic Components Datasheet

MCR218 Datasheet

Thyristors

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Thyristors
Silicon-Controlled Rectifiers
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
Glass-Passivated Junctions
Blocking Voltage to 800 Volts
TO-220 Construction — Low Thermal Resistance, High Heat Dissipation and
Durability
Order this document
by MCR218/D
MCR218
Series
SCRs
8 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Voltage(1)
(TJ = 25 to 125°C, Gate Open)
MCR218-2
MCR218-3
MCR218-4
MCR218-6
MCR218-8
MCR218-10
Symbol
VDRM
VRRM
Value
50
100
200
400
600
800
Unit
Volts
Forward Current RMS
(All Conduction Angles)
IT(RMS)
8
Amps
Peak Forward Surge Current
(1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM 80 Amps
I2t 26 A2s
Forward Peak Gate Power
PGM 5 Watts
Forward Average Gate Power
PG(AV)
0.5
Watt
Forward Peak Gate Current
IGM 2 Amps
Operating Junction Temperature Range
TJ –40 to +125 °C
Storage Temperature Range
Tstg –40 to +150
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1


Motorola Electronic Components Datasheet

MCR218 Datasheet

Thyristors

No Preview Available !

MCR218 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC 2 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max Unit
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
Peak On-State Voltage(1)
(ITM = 16 A Peak)
TJ = 25°C
TJ = 125°C
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ohms)
(Rated VDRM, RL = 1000 Ohms, TJ = 125°C)
Holding Current
(Anode Voltage = 24 Vdc, Peak Initiating On-State Current = 0.5 A,
0.1 to 10 ms Pulse, Gate Trigger Source = 7 V, 20 Ohms)
IDRM, IRRM
— — 10 µA
——
2 mA
VTM
— 1.5 1.8 Volts
IGT — 10 25 mA
VGT
IH
Volts
— — 1.5
0.2 —
— 16 30 mA
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
p1. Pulse Test: Pulse Width = 1 ms, Duty Cycle 2%.
dv/dt
— 100 — V/µs
FIGURE 1 — CURRENT DERATING
125
115
α
105 α = CONDUCTION ANGLE
95
dc
85
α = 30° 60° 90° 120° 180°
75
012345678
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
FIGURE 2 — ON-STATE POWER DISSIPATION
15
FIGURE 3 — NORMALIZED GATE TRIGGER CURRENT
3.0
12 α
α = Conduction Angle
9.0 120° 180°
60° 90°
6.0
α = 30°
3.0
dc
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
IT(AV), AVG. ON-STATE CURRENT (AMPS)
2.0
VD = 12 Vdc
1.5
1.0
0.9
0.7
0.5
0.4
0.3
–60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C)
2 Motorola Thyristor Device Data


Part Number MCR218
Description Thyristors
Maker Motorola
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MCR218 Datasheet PDF






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