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Motorola Electronic Components Datasheet

MCR218FP Datasheet

Silicon Controlled Rectifiers

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
Blocking Voltage to 800 Volts
80 A Surge Current Capability
Insulated Package Simplifies Mounting
Order this document
by MCR218FP/D
MCR218FP
Series
ISOLATED SCRs
8 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221C-02
STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = –40 to +125°C, Gate Open)
MCR218-2FP
MCR218-4FP
MCR218-6FP
MCR218-8FP
MCR218-10FP
VDRM
VRRM
50
200
400
600
800
Volts
On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)
Peak Nonrepetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)
Preceded and followed by rated current
IT(RMS)
ITSM
8
80
Amps
Amps
Circuit Fusing (t = 8.3 ms)
I2t 26 A2s
Peak Gate Power (TC = +70°C, Pulse Width = 10 µs)
PGM 5 Watts
Average Gate Power (TC = +70°C, t = 8.3 ms)
PG(AV)
0.5
Watt
Peak Gate Current (TC = +70°C, Pulse Width = 10 µs)
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
IGM
V(ISO)
2
1500
Amps
Volts
Operating Junction Temperature
TJ –40 to +125 °C
Storage Temperature Range
Tstg –40 to +125
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1


Motorola Electronic Components Datasheet

MCR218FP Datasheet

Silicon Controlled Rectifiers

No Preview Available !

MCR218FP Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Peak Forward Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25°C
TJ = 125°C
Peak Reverse Blocking Current
(VR = Rated VRRM, TJ = 125°C)
Forward “On” Voltage(1)
(ITM = 16 A Peak)
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
Holding Current
(Anode Voltage = 12 Vdc)
Turn-On Time
(ITM = 8 A, IGT = 40 mAdc)
Turn-Off Time (VD = Rated VDRM,
ITM = 8 A, IR = 8 A)
TJ = 25°C
TJ = 125°C
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
p1. Pulse Test: Pulse Width = 1 ms, Duty Cycle 2%.
Symbol
RθJC
RθCS
RθJA
Max
2
2.2 (typ)
60
Unit
°C/W
°C/W
°C/W
Symbol
IDRM
IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
dv/dt
Min Typ Max Unit
— — 10 µA
——
2 mA
——
2 mA
— 1 1.8 Volts
— 10 25 mA
— — 1.5 Volts
0.2 —
— Volts
— 16 30 mA
— 1.5 — µs
µs
— 15 —
— 35 —
— 100 — V/µs
TYPICAL CHARACTERISTICS
125
115
α
105 α = CONDUCTION ANGLE
95
dc
85
α = 30° 60°
90° 120° 180°
75
012345678
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
Figure 1. Current Derating
15
12 α
α = CONDUCTION ANGLE
9
120° 180°
60° 90°
6
α = 30°
3
dc
0
012345678
IT(AV), AVG. ON-STATE CURRENT (AMPS)
Figure 2. On-State Power Dissipation
2 Motorola Thyristor Device Data


Part Number MCR218FP
Description Silicon Controlled Rectifiers
Maker Motorola
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MCR218FP Datasheet PDF






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