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Motorola Electronic Components Datasheet

MCR225-10FP Datasheet

Silicon Controlled Rectifiers

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits.
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
Blocking Voltage to 800 Volts
300 A Surge Current Capability
Insulated Package Simplifies Mounting
Order this document
by MCR225FP/D
MCR225FP
Series
ISOLATED SCRs
25 AMPERES RMS
50 thru 800 VOLTS
G
AK
CASE 221C-02
STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = –40 to +125°C, Gate Open)
MCR225-2FP
MCR225-4FP
MCR225-6FP
MCR225-8FP
MCR225-10FP
VDRM
VRRM
50
200
400
600
800
Volts
On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2)
IT(RMS)
25
Amps
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C)
Preceded and followed by rated current
ITSM 300 Amps
Circuit Fusing (t = 8.3 ms)
I2t 375 A2s
Peak Gate Power (TC = +70°C, Pulse Width = 10 µs)
Average Gate Power (TC = +70°C, t = 8.3 ms)
Peak Gate Current (TC = +70°C, Pulse Width = 10 µs)
pRMS Isolation Voltage (TA = 25°C, Relative Humidity 20%)
Operating Junction Temperature Range
Storage Temperature Range
PGM
PG(AV)
IGM
V(ISO)
TJ
Tstg
20
0.5
2
1500
–40 to +125
–40 to +125
Watts
Watt
Amps
Volts
°C
°C
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic
body.
Motorola Thyristor Device Data
© Motorola, Inc. 1995
1


Motorola Electronic Components Datasheet

MCR225-10FP Datasheet

Silicon Controlled Rectifiers

No Preview Available !

MCR225FP Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Peak Forward Blocking Current
(VD = Rated VDRM, Gate Open)
Peak Reverse Blocking Current
(VR = Rated VRRM)
Forward “On” Voltage(1)
(ITM = 50 A)
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
TJ = 25°C
TJ = 125°C
TJ = 125°C
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
Holding Current
(Anode Voltage = 12 Vdc)
Turn-On Time
(ITM = 25 A, IGT = 40 mAdc)
Turn-Off Time (VDRM = Rated Voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
p1. Pulse Test: Pulse Width = 1 ms, Duty Cycle 2%.
Symbol
RθJC
RθCS
RθJA
Max
1.5
2.2 (typ)
60
Unit
°C/W
°C/W
°C/W
Symbol
IDRM
IRRM
VTM
IGT
VGT
VGD
IH
tgt
tq
dv/dt
Min Typ Max Unit
— — 10 µA
——
2 mA
——
2 mA
— — 1.8 Volts
— — 40 mA
— 0.8 1.5 Volts
0.2 —
— Volts
— 20 40 mA
— 1.5 — µs
µs
— 15 —
— 35 —
— 100 — V/µs
TYPICAL CHARACTERISTICS
130
120 α
α = CONDUCTION ANGLE
110
100
α = 30° 60° 90° 180°
dc
90
80
0 4 8 12 16 20
IT(AV), ON-STATE FORWARD CURRENT (AMPS)
Figure 1. Average Current Derating
32
24 α
α = CONDUCTION ANGLE
α = 30°
16
60°
90°
8
180° dc
TJ = 125°C
0
0 4 8 12 16 20
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
Figure 2. Maximum On-State Power Dissipation
2 Motorola Thyristor Device Data


Part Number MCR225-10FP
Description Silicon Controlled Rectifiers
Maker Motorola
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MCR225-10FP Datasheet PDF






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