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MD4957 - HIGH FREQUENCY TRANSISTOR

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    MD4957 CASE 654-02, STYLE 1 TO-78 DUAL HIGH FREQUENCY TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v CEO VCBO VEBO ic PD Tj, Tstg Value 30 30 3.0 30 One Side Both Sides Unit Vdc Vdc Vdc mAdc 200 1.15 400 2.3 - 65 to + 200 mW mW/°C °C ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage c
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