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MFQ107
CASE 646-05, STYLE I QUAD
DUAL IN LINE
TMOS
N-CHANNEL - ENHANCEMENT
Refer to MFE9200 for graphs
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current
Total Device Dissipation
@TA = 25°C(1)
Derate above 25 °C Operating and Storage
Junction Temperature Range
Symbol
Value
VDS 200 Vqg 200
vgs + 20
" ID
400
;
Four
Each
Transistors
Transistor Equal Power
Unit Vdc Vdc Vdc
mAdc
PD Tj. T stg
0.5 1.2 4.0 9.6
-55 to +150
Watts
mW/°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.
MFQ107 Datasheet
