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MFQ990C - QUAD DUAL-IN-LINE TMOS

Download the MFQ990C datasheet PDF. This datasheet also covers the MFQ930C variant, as both devices belong to the same quad dual-in-line tmos family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MFQ930C-Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MFQ930C MFQ960C MFQ990C MAXIMUM RATINGS Rating Symbol MFQ930C MFQ960C MFQ990C CASE 632-02, STYLE 1 TO-116 QUAD DUAL-IN-LINE TMOS N-CHANNEL — ENHANCEMENT Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Continuous (1) Pulsed (2) vDs vDg vgs id Idm @Total Device Dissipation T/ = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range 35 60 90 35 60 90 ±30 2.0 3.0 Each Total Transistor Device PD TJ. Tstg 0.5 17.0 2.0 66.6 - 55 to + 1 50 Refer to MFE930 for graphs. ELECTRICAL CHARACTERISTICS (TA 25°C unless otherwise noted.