MGP15N43CL Datasheet PDF - Motorola Internally Clamped N-Channel IGBT Specs

MGP15N43CL - Internally Clamped N-Channel IGBT

Datasheet Summary

Features

Gate.
Emitter ESD protection, Gate Collector Over.
Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver.
Temperature Compensated Gate.
Collector Clamp Limits Stress Applied to Load.
Integrated ESD Diode Protection.
Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices.
Low Saturation Voltage.
High Pulsed Current Capability C Order this document by MGP15N43CL/D MGP15N43C.

Datasheet Details

Part number	MGP15N43CL
Manufacturer	Motorola
File Size	58.43 KB
Description	Internally Clamped N-Channel IGBT
Datasheet	MGP15N43CL Datasheet
Additional preview pages of the MGP15N43CL datasheet.

📁 Similar Datasheet

MGP15N40CL - Internally Clamped N-Channel IGBT (ON)

MGP15N35CL - Internally Clamped N-Channel IGBT (ON)

MGP19N35CL - IGBT (ON Semiconductor)

MGP3006 - GHz PLL with I2C Bus and Four Chip Addresses (Siemens)

MGP3006X - GHz PLL with I2C Bus and Four Chip Addresses (Siemens)

MGP3006X6 - GHz PLL with I2C Bus and Four Chip Addresses (Siemens)

MGPN0515-C12 - GaAs PIN Diodes (MA-COM)

MGPN0518-C12 - GaAs PIN Diodes (MA-COM)

MGPN1503-C01A - GaAs PIN Diodes (MA-COM)

Full PDF Text Transcription

Click to expand full text

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview Internally Clamped N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over– Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability C Order this document by MGP15N43CL/D MGP15N43CL 15 AMPERES N–CHANNEL IGBT VCE(on) = 1.

Published: Mar 1, 2018 |