Full PDF Text Transcription for MGSF3441XT1 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MGSF3441XT1. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Preliminary Information Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine™ Por...
View more extracted text
S Single P-Channel Field Effect Transistors Part of the GreenLine™ Portfolio of devices with energy– conserving traits. ™ These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
More Datasheets from Motorola Semiconductor (now NXP Semiconductors)
MGSF3441XT1 Datasheet
