MHW1184
Key Features
- all gold metallization system
- Guaranteed Broadband Power Gain @ f = 5.0- 200 MHz
- Guaranteed Broadband Noise Figure @ f = 5.0- 175 MHz
- Superior Gain, Return Loss and DC Current Stability with Temperature
- All Gold Metallization
- All Ion-Implanted Arsenic Emitter Transistor Chips with 6.0 GHz fT’s
- Circuit Design Optimized for Good RF Stability Under High VSWR Load Conditions
