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Motorola Electronic Components Datasheet

MJ2500 Datasheet

10 AMPERE DARLINGTON POWER TRANSISTORS

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc
Monolithic Construction with Built–in Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermalResistance, Junction to Case
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Symbol
θJC
MJ2500
MJ3000
MJ2501
MJ3001
60 80
60 80
5.0
10
0.2
Unit
Vdc
Vdc
Vdc
Adc
Adc
150
0.857
– 55 to + 200
Watts
W/_C
_C
Max Unit
1.17 _C/W
Order this document
by MJ2500/D
MJ2955 (See 2N3055)
MJ2955A
(See 2N3055A)
PNP
MJ2500
MJ2501*
NPN
MJ3000
MJ3001*
*Motorola Preferred Device
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 VOLTS
150 WATTS
CASE 1–07
TO–204AA
(TO–3)
PNP
MJ2500
MJ2501
COLLECTOR
NPN
MJ3000
MJ3001
COLLECTOR
BASE
[ [2.0 k 50
BASE
[ [2.0 k 50
EMITTER
Figure 1. Darlington Circuit Schematic
EMITTER
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1


Motorola Electronic Components Datasheet

MJ2500 Datasheet

10 AMPERE DARLINGTON POWER TRANSISTORS

No Preview Available !

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMJ2500 MJ2501 MJ3000 MJ3001
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Emitter Breakdown Voltage(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 100 mAdc, IB = 0)
MJ2500, MJ3000
MJ2501, MJ3001
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Leakage Current
(VEB = 60 Vdc, RBE = 1.0 k ohm)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 80 Vdc, RBE = 1.0 k ohm)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150_C)
(VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150_C)
MJ2500, MJ3000
MJ2501, MJ3001
MJ2500, MJ3000
MJ2501, MJ3001
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Emitter Leakage Current (VCE = 30 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc)
MJ2500, MJ3000
MJ2501, MJ3001
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, IB = 50 mAdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv v(1)Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Symbol
V(BR)CEO
ICER
IEBO
ICEO
hFE
VCE(sat)
VBE(on)
Min
60
80
1000
Max Unit
— Vdc
mAdc
1.0
1.0
5.0
5.0
2.0 mAdc
1.0 mAdc
1.0
——
2.0 Vdc
4.0
3.0 Vdc
50,000
20,000
10,000
5000
TJ = 150°C
2000 25°C
1000
500
200
100
50
0.01 0.02
– 55°C
VCE = 3.0 Vdc
0.05 0.1 0.2 0.5 1.0 2.0
IC, COLLECTOR CURRENT (AMP)
Figure 2. DC Current Gain
5.0 10
3.5
3.0 TJ = 25°C
2.5
2.0
1.5 VBE(sat) @ IC/IB = 250
1.0 VBE @ VCE = 3.0 V
0.5 VCE(sat) @ IC/IB = 250
0
0.01 0.02 0.05 0.1 0.2 0.5
1.0 2.0
5.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 4. “On” Voltages
There are two limitations on the power handling ability of a
transistor: junction temperature and secondary breakdown.
Safe operating area curves indicate IC – VCE limits of the
transistor that must be observed for reliable operation; e.g.,
the transistor must not be subjected to greater dissipation
3000
2000
1000
500
300
200
100
TC = 25°C
VCE = 3.0 Vdc
IC = 5.0 Adc
50
30
103
104 105
f, FREQUENCY (Hz)
Figure 3. Small–Signal Current Gain
106
10
7.0
5.0
3.0 SECONDARY BREAKDOWN LIMITED
2.0 THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
1.0
0.7
0.5
0.3
0.2
0.1
1.0
TJ = 200°C
MJ2500, MJ3000
MJ2501, MJ3001
2.0 3.0 5.0 7.0 10
20 30
50 70 100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. DC Safe Operating Area
than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
2 Motorola Bipolar Power Transistor Device Data


Part Number MJ2500
Description 10 AMPERE DARLINGTON POWER TRANSISTORS
Maker Motorola
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MJ2500 Datasheet PDF






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