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MJL21196 - (MJL21195 / MJL21196) SILICON POWER TRANSISTORS

Download the MJL21196 datasheet PDF. This datasheet also covers the MJL21195 variant, as both devices belong to the same (mjl21195 / mjl21196) silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

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📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJL21195_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21195/D MJL21195 Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. • • • • Total Harmonic Distortion Characterized High DC Current Gain – hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 2.50 A, 80 V, 1 Second PNP MJL21196 *Motorola Preferred Device NPN * * 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS CASE 340G–02 TO–3PBL MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage – 1.
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