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MM8000 - HIGH FREQUENCY TRANSISTOR

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MM8000 MM8001 MM8002 CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current @Total Device Dissipation Jq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO "c PD Tj. Tstg Value 30 40 3.5 0.4 3.5 20 - 65 to + 200 Unit Vdc Vdc Vdc Adc Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage dC = 5.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, l£ = 0) Emitter-Base Breakdown Voltage (IE = 0.
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