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Motorola Electronic Components Datasheet

MMAD1108 Datasheet

Monolithic Diode Array

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Monolithic Diode Array
Surface Mount Isolated 8–Diode Array
This diode array is a multiple diode junction fabricated by a planar process and
mounted in integrated circuit packages for use in high–current, fast–switching
core–driver applications. This array offers the advantages of an integrated circuit with
high–density packaging and improved reliability. This advantage results from such
factors as fewer connections, more uniform device parameters, smaller size, less
weight and fewer glass–to–metal seals.
Designed for use in Computers and Peripheral Equipment
Applications Include:
Magnetic Cores
Thin–Film Memories
Plated–Wire Memories
Decoding or Encoding
MMAD1108
Motorola Preferred Device
16
1
CASE 751B–05
SO–16
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
Steady–State Reverse Voltage
Peak Forward Current 25°C
Continuous Forward Current
Power Dissipation
Derating Factor
Operating Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IF
PD
TA
Tstg
Value
50
50
500
400
500
4.0
– 65 to +150
– 65 to +150
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
°C
PIN CONNECTION DIAGRAM
12345678
16 15 14 13 12 11 10 9
ELECTRICAL CHARACTERISTICS (@ 25°C Free–Air Temperature)
Limit
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage(1)
(IR = 10 µAdc)
V(BR)
50
— Vdc
Static Reverse Current
(VR = 40 Vdc)
IR — 0.1 µAdc
Static Forward Voltage
(IF = 100 mAdc)
(IF = 500 mAdc)(2)
Peak Forward Voltage(3)
(IF = 500 mAdc)
VF Vdc
— 1.2
— 1.6
VFM — 5.0 Vdc
NOTES:
1. This parameter must be measured using pulse techniques. PW = 100 µs, duty cycle 20%.
2. This parameter is measured using pulse techniques. PW = 300 µs, duty cycle 2.0%. Read time is 90 µs from the leading edge of the
pulse.
3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle 2.0%, pulse rise time 10 ns. The total
capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
5–96
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

MMAD1108 Datasheet

Monolithic Diode Array

No Preview Available !

ELECTRICAL CHARACTERISTICS (@ 25°C Free–Air Temperature) (Continued)
Characteristic
SWITCHING CHARACTERISTICS (@ 25°C Free–Air Temperature)
Forward Recovery Time
(IF = 500 mAdc)
Reverse Recovery Time
W(IF = 200 mA, IRM = 200 mA, RL = 100 , irr = 20 mA)
Symbol
tfr
trr
MMAD1108
Typical Value
20
8.0
Unit
ns
ns
1000
100
TA = +25°C
10
1.0
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Characteristics Static
Forward Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–97


Part Number MMAD1108
Description Monolithic Diode Array
Maker Motorola
Total Page 3 Pages
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