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Motorola Electronic Components Datasheet

MMAD1109 Datasheet

Monolithic Diode Arrays

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMAD130/D
Monolithic Diode Arrays
Surface Mount Diode Arrays
These diode arrays are multiple diode junctions fabricated by a planar process and
mounted in integrated circuit packages for use in high–current, fast–switching
core–driver applications. These arrays offer many of the advantages of integrated
circuits such as high–density packaging and improved reliability. These advantages
result from such factors as fewer glass–to–metal seals.
Designed for Use in Computers and Peripheral Equipment
Applications Include:
Magnetic Cores
Thin–Film Memories
Plated–Wire Memories
Decoding or Encoding Applications
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
Steady–State Reverse Voltage
Peak Forward Current 25°C
Continuous Forward Current
Power Dissipation
Derating Factor
Operating Temperature
Storage Temperature Range
Symbol
VRM
VR
IFM
IF
PD
TA
Tstg
Value
50
50
500
400
500
4.0
– 65 to +150
– 65 to +150
Unit
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
°C
SO–14 PIN DIAGRAM
1
Dual 10 Diode Array
11 3
MMAD130
MMAD1103
MMAD1105
MMAD1107
MMAD1109
14
1
CASE 751A–03
SO–14
2
16 Diode Array
1
8 9 10 13 14 1 4 5 6 7
2 3 5 7 8 9 11 12
12 2
MMAD130
14
NC Pin 4, 6, 10, 13
MMAD1103
3
8 Diode Array
(Common Cathode)
14
2 3 5 7 8 9 11 12
NC Pin 1, 4, 6, 10, 13
MMAD1105
5
7 Diode Array
(Independent)
7654321
4
Dual 8 Diode Array
18
2 3 11 12 4 5 9 10
14
NC Pin 6, 13
MMAD1107
7
Thermal Clad is a trademark of the Bergquist Company
8 9 10 11 12 13 14
MMAD1109
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1


Motorola Electronic Components Datasheet

MMAD1109 Datasheet

Monolithic Diode Arrays

No Preview Available !

MMAD130 MMAD1103 MMAD1105 MMAD1107
MMAD1109
Device
Description
MMAD130
Dual 10 Diode Array
MMAD1103 16 Diode Array
MMAD1105 8 Diode Array Common Cathode
MMAD1107 Dual 8 Diode Array
MMAD1109 7 Diode Array
Diagram
1
2
3
4
5
ELECTRICAL CHARACTERISTICS (@ 25°C Free–Air Temperature)
Limit
Reverse Breakdown Voltage(1)
(IR = 10 µAdc)
Characteristic
Symbol
Min
Max
Unit
V(BR)
50
Vdc
Static Reverse Current
(VR = 40 Vdc)
IR µAdc
— 0.1
Static Forward Voltage
(IF = 100 mAdc)
(IF = 500 mAdc)(2)
Peak Forward Voltage(3)
(IF = 500 mAdc)
VF Vdc
— 1.2
— 1.6
VFM
Vdc
— 5.0
SWITCHING CHARACTERISTICS (@ 25°C Free–Air Temperature)
Characteristic
Symbol
Typical Value
Unit
Forward Recovery Time
(IF = 500 mAdc)
tfr 20 ns
Reverse Recovery Time
W(IF = 200 mA, IRM = 200 mA, RL = 100 , irr = 20 mA)
trr 8.0 ns
NOTES:
1. This parameter must be measured using pulse techniques. PW = 100 µs, duty cycle 20%.
2. This parameter is measured using pulse techniques. PW = 300 µs, duty cycle 2.0%. Read time is 90 µs from the leading edge of the
pulse.
3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle 2.0%, pulse rise time 10 ns. The total
capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
1000
100
TA = +25°C
10
1.0
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Characteristics Static
Forward Voltage
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MMAD1109
Description Monolithic Diode Arrays
Maker Motorola
Total Page 6 Pages
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