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Motorola Electronic Components Datasheet

MMBD1010LT1 Datasheet

Switching Diode

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Switching Diode
Part of the GreenLinePortfolio of devices with energy–conserving traits.
This switching diode has the following features:
Very Low Leakage (500 pA) promotes extended battery life by decreas-
ing energy waste. Guaranteed leakage limit is for each diode in the pair
contingent upon the other diode being in a non–forward–biased condition.
Offered in four Surface Mount package types
Available in 8 mm Tape and Reel in quantities of 3,000
Applications
ESD Protection
Reverse Polarity Protection
Steering Logic
Medium–Speed Switching
3
CATHODE
ANODE
1
2
ANODE
MMBD1010LT1
MMBD2010T1
MMBD3010T1
Motorola Preferred Devices
MMBD1010LT1
3
1
2
CASE 318-08, STYLE 9
SOT-23 (TO-236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
DEVICE MARKING
VR 30 Vdc
IF 200 mAdc
IFM
(surge)
500
mA
MMBD1010LT1 = A5
MMBD2010T1 = DP
MMBD3010T1 = XS
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-4 Board (1)
TA = 25°C
MMBD1010LT1, MMBD3010T1
MMBD2010T1
Derate above 25°C MMBD1010LT1, MMBD3010T1
MMBD2010T1
Symbol
PD
Max Unit
mW
225
150
1.8 mW/°C
1.2
Thermal Resistance Junction to Ambient
MMBD1010LT1, MMBD3010T1
MMBD2010T1
RθJA
°C/W
556
833
Junction and Storage Temperature
TJ, Tstg – 55 to +150
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
°C
MMBD2010T1
3
1
2
CASE 419-02, STYLE 5
SC–70/SOT–323
MMBD3010T1
2
1
3
CASE 318D-04, STYLE 3
SC–59
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
3–50
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

MMBD1010LT1 Datasheet

Switching Diode

No Preview Available !

MMBD1010LT1 MMBD2010T1 MMBD3010T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 µA)
Reverse Voltage Leakage Current (VR = 75 V)(2)
V(BR)
30
V
IR — 500 pA
Forward Voltage (IF = 1.0 mA)
Forward Voltage (IF = 10 mA)
VF — 850 mV
— 950
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
CD — 2.0 pF
Reverse Recovery Time (IF = IR = 10 mA) (Figure 1)
trr — 3.0 µs
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being
in a non–forward–biased condition.
+10 V
820
2k
100 µH
0.1 µF
IF
0.1 µF
tr tp
10%
t
IF
trr t
50 OUTPUT
PULSE
GENERATOR
DUT
50 INPUT
90%
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kvariable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3–51


Part Number MMBD1010LT1
Description Switching Diode
Maker Motorola
Total Page 2 Pages
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