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Motorola Electronic Components Datasheet

MMBD101LT1 Datasheet

Schottky Barrier Diodes

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for use in detector
and ultra–fast switching circuits. Supplied in an inexpensive plastic package for
low–cost, high–volume consumer requirements. Also available in Surface Mount
package.
Low Noise Figure — 6.0 dB Typ @ 1.0 GHz
Very Low Capacitance — Less Than 1.0 pF @ Zero Volts
High Forward Conductance — 0.5 Volts (Typ) @ IF = 10 mA
MBD101
MMBD101LT1
Motorola Preferred Devices
SILICON SCHOTTKY
BARRIER DIODES
2
CATHODE
1
ANODE
3
CATHODE
1
ANODE
1
2
CASE 182– 02, STYLE 1
(TO–226AC)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
MMBD101LT1 = 4M
Symbol
VR
PF
TJ
Tstg
MBD101 MMBD101LT1
Value
7.0
Unit
Volts
280 225
2.2 1.8
+150
– 55 to +150
mW
mW/°C
°C
°C
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Reverse Breakdown Voltage
(IR = 10 µAdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz, Note 1)
Forward Voltage(1)
(IF = 10 mAdc)
Reverse Leakage
(VR = 3.0 Vdc)
V(BR)R
CT
VF
IR
7.0
10 —
0.88 1.0
0.5 0.6
0.02 0.25
NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk.
Unit
Volts
pF
Volts
µAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
5–80
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

MMBD101LT1 Datasheet

Schottky Barrier Diodes

No Preview Available !

MBD101 MMBD101LT1
TYPICAL CHARACTERISTICS
(TA = 25°C unless noted)
1.0
0.7
0.5
VR = 3.0 Vdc
0.2
100
TA = 85°C
10
0.1
0.07
TA = –40°C
0.05 1.0
TA = 25°C
0.02
0.01
30 40 50 60 70 80 90 100 110 120 130
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Reverse Leakage
0.1
0.3
0.4 0.5 0.6 0.7
VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Forward Voltage
1.0 11
10 LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
9.0 (TEST CIRCUIT IN FIGURE 5)
0.9
8.0
7.0
0.8 6.0
5.0
4.0
0.7
3.0
2.0
0.6 0
1.0
1.0 2.0 3.0 4.0
0.1 0.2
0.5 1.0 2.0
5.0 10
VR, REVERSE VOLTAGE (VOLTS)
PLO, LOCAL OSCILLATOR POWER (mW)
Figure 3. Capacitance
Figure 4. Noise Figure
LOCAL
OSCILLATOR
UHF
NOISE SOURCE
H.P. 349A
DIODE IN
TUNED
MOUNT
NOISE
FIGURE METER
H.P. 342A
IF AMPLIFIER
NF = 1.5 dB
f = 30 MHz
Figure 5. Noise Figure Test Circuit
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — CC and CT are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local
oscillator (LO) frequency of 1.0 GHz. The LO power
is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f =
30 MHz, see Figure 5.
Note 3 — LS is measured on a package having a short instead
of a die, using an impedance bridge (Boonton Radio
Model 250A RX Meter).
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–81


Part Number MMBD101LT1
Description Schottky Barrier Diodes
Maker Motorola
Total Page 2 Pages
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