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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD2835LT1/D
Monolithic Dual Switching Diodes
MMBD2835LT1 MMBD2836LT1
ANODE 3
CATHODE 1 2 CATHODE
1 2
3
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse Voltage Forward Current MMBD2835LT1 MMBD2836LT1 Symbol VR IF Value 35 75 100 Unit Vdc mAdc
CASE 318 – 08, STYLE 12 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.
MMBD2836LT1 Datasheet
