Datasheet Summary
MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBF5460LT1/D
JFET General Purpose Transistor
P- Channel
3 GATE 2 SOURCE
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating Drain- Gate Voltage Reverse Gate- Source Voltage Forward Gate Current Symbol VDG VGSR IGF Value 40 40 10 Unit Vdc Vdc mAdc CASE 318
- 08, STYLE 10 SOT- 23 (TO
- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 Rq JA TJ, Tstg 556
- 55 to +150 Unit mW mW/°C °C/W °C
DEVICE MARKING
MMBF5460LT1 = 6E
ELECTRICAL CHARACTERISTICS (TA...
